inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2642 description collector-emitter breakdown voltage- : v (br)ceo = 110v(min) high dc current gain- : h fe = 5000( min.) @(i c = 5a, v ce = 4v) low collector saturation voltage- : v ce(sat) = 2.5v(max)@ (i c = 5a, i b = 5ma) b complement to type 2sb1687 applications designed for audio, series regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 110 v v ceo collector-emitter voltage 110 v v ebo emitter-base voltage 5 v i c collector current-continuous 6 a i b base current-continuous 1 a p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2642 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma ; i b = 0 110 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 5ma b 2.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 5ma b 3.0 v i cbo collector cutoff current v cb = 110v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe dc current gain i c = 5a; v ce = 4v 5000 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 55 pf f t current-gain?bandwidth product i e = -0.5a ; v ce = 12v 60 mhz switching times t on turn-on time 0.8 s t stg storage time 6.2 s t f fall time v cc = 30v, r l = 6 , i c = 5a; i b1 = -i b2 = 5ma, 1.1 s ? h fe classifications o p y 5000-12000 6500-20000 15000-30000 isc website www.iscsemi.cn 2
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